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Abstract Single-photon emitters are crucial building blocks for optical quantum technologies. Hexagonal boron nitride (hBN) is a promising two-dimensional material that hosts bright, room-temperature single-photon emitters. However, photo instability is a persistent challenge preventing practical applications of these properties. Here, we reveal the ubiquitous photobleaching of hBN vacancy emitters. Independent of the source or the number of hBN layers, we find that the photobleaching of a common emission at 1.98 ± 0.05 eV can be described by two consistent time constants, namely a first bleaching lifetime of 5 to 10 s, and a second bleaching lifetime in the range of 150 to 220 s. Only the former is environmentally sensitive and can be significantly mitigated by shielding O₂, whereas the latter could be the result of carbon-assisted defect migration. Annular dark-field scanning transmission electron microscopy of photobleached hBN allows for visualizing vacancy defects and carbon substitution at single atom resolution, supporting the migration mechanism along with X-ray photoelectron spectroscopy. Thermal annealing at 850 °C of liquid exfoliated hBN eliminates both bleaching processes, leading to persistent photostability. These results represent a significant advance to potentially engineer hBN vacancy emitters with the photostability requisite for quantum applications. 

Abstract Porous graphene and other atomically thin 2D materials are regarded as highly promising membrane materials for high‐performance gas separations due to their atomic thickness, large‐scale synthesizability, excellent mechanical strength, and chemical stability. When these atomically thin materials contain a high areal density of gas‐sieving nanoscale pores, they can exhibit both high gas permeances and high selectivities, which is beneficial for reducing the cost of gas‐separation processes. Here, recent modeling and experimental advances in nanoporous atomically thin membranes for gas separations is discussed. The major challenges involved, including controlling pore size distributions, scaling up the membrane area, and matching theory with experimental results, are also highlighted. Finally, important future directions are proposed for real gas‐separation applications of nanoporous atomically thin membranes. 

Abstract Single‐layer graphene containing molecular‐sized in‐plane pores is regarded as a promising membrane material for high‐performance gas separations due to its atomic thickness and low gas transport resistance. However, typical etching‐based pore generation methods cannot decouple pore nucleation and pore growth, resulting in a trade‐off between high areal pore density and high selectivity. In contrast, intrinsic pores in graphene formed during chemical vapor deposition are not created by etching. Therefore, intrinsically porous graphene can exhibit high pore density while maintaining its gas selectivity. In this work, the density of intrinsic graphene pores is systematically controlled for the first time, while appropriate pore sizes for gas sieving are precisely maintained. As a result, single‐layer graphene membranes with the highest H₂/CH₄separation performances recorded to date (H₂permeance > 4000 GPU and H₂/CH₄selectivity > 2000) are fabricated by manipulating growth temperature, precursor concentration, and non‐covalent decoration of the graphene surface. Moreover, it is identified that nanoscale molecular fouling of the graphene surface during gas separation where graphene pores are partially blocked by hydrocarbon contaminants under experimental conditions, controls both selectivity and temperature dependent permeance. Overall, the direct synthesis of porous single‐layer graphene exploits its tremendous potential as high‐performance gas‐sieving membranes.